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CSD17304Q3 30V N-Channel NexFET™ 60A Continuous 2.2mΩ Rds(on) SON 3.3x3.3mm -55°C to +150°C AEC-Q101

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Ben sohbet şimdi

CSD17304Q3 30V N-Channel NexFET™ 60A Continuous 2.2mΩ Rds(on) SON 3.3x3.3mm -55°C to +150°C AEC-Q101

Büyük resim : CSD17304Q3 30V N-Channel NexFET™ 60A Continuous 2.2mΩ Rds(on) SON 3.3x3.3mm -55°C to +150°C AEC-Q101

Ürün ayrıntıları:

Place of Origin:	China
Marka adı:	Texas Instruments
Sertifika:	CE,ROHS
Model Number:	CSD17304Q3

Ödeme & teslimat koşulları:

Minimum Order Quantity:	1pcs

İletişim

Detaylı ürün tanımı

Frequency Stability:	±50ppm	Frequency Tolerance:	±30ppm
Operating Temperature:	-40°C ~ 85°C	Load Capacitance:	18pF
Package / Case:	HC-49/US	Name:	Passive Electronic Components
Vurgulamak:	CSD17304Q3 , CSD17304Q3 N-Channel NexFET , 30V N-Channel NexFET

CSD17304Q3

FEATURES

• Optimizedfor5VGateDrive

• UltralowQgandQgd

• LowThermalResistance

• AvalancheRated

• PbFreeTerminalPlating

• RoHSCompliant

• HalogenFree

• SON3.3-mm×3.3-mmPlasticPackage

APPLICATIONS

• NotebookPointofLoad

• Point-of-LoadSynchronousBuckin

Networking,Telecom,andComputingSystems

DESCRIPTION

The CSD17304Q3 is a 30V N-channel NexFET™ power MOSFET from Texas Instruments (TI), featuring an advanced SON 3.3x3.3mm package. Designed for high-current, high-efficiency power conversion, its ultra-low Rds(on) (2.2mΩ) and 60A continuous current capability make it ideal for automotive electronics, industrial power systems, and motor drives.

✔ 80% smaller than TO-220 packages
✔ 60% lower conduction loss (vs. 5mΩ MOSFETs)
✔ Supports 1MHz PWM switching

INFORMATION

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Texas Instruments
Series	NexFET™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	15A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	3V, 8V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 17A, 8V
Vgs(th) (Max) @ Id	1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.6 nC @ 4.5 V
Vgs (Max)	+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds	955 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.7W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-VSON-CLIP (3.3x3.3)
Package / Case	8-PowerTDFN
Base Product Number	CSD17304

Drawing

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Diğer ürünler

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Frequency Stability: ±50ppm

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GMK316AB7106KL-TR 10μF 16V MLCC X5R 1206 ±10% Tol Düşük ESR -55°C'den +85°C'ye kadar AEC-Q200

Frekans Kararlılığı: ±50ppm

Frekans Toleransı: ±30ppm

Çalışma sıcaklığı: -40°C ~ 85°C

Yük Kapasitesi: 18pF

CSD17304Q3 30V N-Channel NexFET™ 60A Continuous 2.2mΩ Rds(on) SON 3.3x3.3mm -55°C to +150°C AEC-Q101

CSD17304Q3 30V N-Channel NexFET™ 60A Continuous 2.2mΩ Rds(on) SON 3.3x3.3mm -55°C to +150°C AEC-Q101

CSD17304Q3

CSD17304Q3 N-Channel NexFET

30V N-Channel NexFET

4900MHz 5g mm dalga anteni,

4400MHz 5g mimo anten,

CSD17304Q3